Active Broadband (up to 8GHz) GaAs mixer
A high performance GaAs pHEMT technology based active double balanced mixer MMIC. This mixer covers a very wide frequency range with a conversion gain of typically 12 dB, and uses an active Gilbert Cell Mixer Structure. The die is manufactured using 0.18 μm gate length pHEMT Technology. The MMIC uses gold bond pads and backside metallization and is fully protected with Silicon Nitride passivation to obtain the highest level of reliability.
Packaging
The mixer is packaged in 8 lead glass flatpack G1616M-1 and assembled on FR4 test board.
Performance
A minimum LO power of -5 dBm is required to obtain a conversion gain of about 12 dB at midband 4.0 GHz RF frequency. This represents a relatively low LO power requirement.
